Research on a novel processing technology to produce sheet materials from bulk solids is proposed. The objective is to develop a means to produce high quality, low cost silicon ribbon. This new technology when developed will reduce the cost of silicon wafer production. Current silicon wafer production from Czochralski grown crystals wastes, through sawing, lapping and polishing operations, up to 70% of the as grown crystal which represents a billion dollar loss world wide. Success of the new process will produce single crystal silicon ribbons of semiconductor quality with a three fold reduction in cost and no more than a 10% waste of crystal material. The new technology will be energy efficient and applicable to electronic materials, glasses and ceramics. The innovative use of thermal and electrical gradients to control steady crystal growth is a principal feature of this research. The research will provide data and control parameters necessary for process automation in Phase II. Improved insight for the processing of other materials of commercial or scientific interest will result.

Agency
National Science Foundation (NSF)
Institute
Division of Industrial Innovation and Partnerships (IIP)
Type
Standard Grant (Standard)
Application #
8860135
Program Officer
Ritchie B. Coryell
Project Start
Project End
Budget Start
1989-02-01
Budget End
1989-10-31
Support Year
Fiscal Year
1988
Total Cost
$45,733
Indirect Cost
Name
Energy Materials Research
Department
Type
DUNS #
City
Rochester Hills
State
MI
Country
United States
Zip Code
48309