This project is in the general area of materials chemistry and in the subfield of organometallic chemistry. The thrust of this experimental activity is the synthesis and characterization of new molecules as more efficient precursors for the fabrication of thin metal film devices by metalorganic chemical vapor deposition (MOCVD) technology. Unsymmetrical tellurides (RTeR') represent a novel alternative to the non-optimal source reagents currently in use. These unsymmetrical tellurides will have increased volatility while maintaining labile tellurium-carbon bonds by appropriate choice of the R and R' groups. The technical approach in this Phase activity is the synthesis and characterization of a series of five compounds of formula RTeR' by modifications of literature procedures. These five compounds will be pyrolized and the products identified. The relative role of carbon-based vs. tellurium-based radicals on the decomposition rate and growth temperature will be studied. Low growth temperatures are essential for the MOCVD of abrupt heterojunction devices fabricated from mercury cadmium telluride. Success in Phase I will result in the identification of new, low temperature source reagents for the MOCVD of tellurium alloys. Upon successful completion of this Phase I research, the utility of these reagents will be demonstrated in the fabrication of mercury cadmium telluride films in a subsequent Phase II effort.

Agency
National Science Foundation (NSF)
Institute
Division of Industrial Innovation and Partnerships (IIP)
Type
Standard Grant (Standard)
Application #
8860518
Program Officer
Darryl G. Gorman
Project Start
Project End
Budget Start
1989-01-01
Budget End
1989-09-30
Support Year
Fiscal Year
1988
Total Cost
$50,000
Indirect Cost
Name
Advanced Technology Materials, Inc.
Department
Type
DUNS #
City
Cedarville
State
OH
Country
United States
Zip Code
45314