The application of high temperature superconductors (HTSC) in electronics requires a cost-effective deposition process capable of growing epitaxial, in-situ superconducting thin films below 650oC. Metalorganic Chemical Vapor Deposition (MOCVD) has the potential to meet this need; however, it is currently limited by the high temperatures required to decompose the intermediates formed by the decomposition of Group II source reagents. The research will provide a fundamental understanding of the barium chemistry occurring at the growth interface which will facilitate the low temperature preparation of HTSC thin films. If low growth temperatures can be realized, the development of a manufacturing process should rapidly follow based on CVD's inherent advantages in large area uniformity and ease of scale- up.
