The proposed work is for research of thin silicon films on relatively low melting point glass. Polycrystalline silicon is a semiconductor which can be used to fabricate transistors. Low temperature (550 C) processing of polysilicon opens up new areas of application such as electronics for large-area displays and images. However, because the material is deposited rather than grown as a single crystal and cut into wafers, it makes it possible to consider concepts of multi-level three dimensional integration since lower processing temperatures allow for compatibility between layers. CMOS circuitry will be developed and multi-level aspects addressed for vertical integration.
