This project implements a time-resolved photoluminescence technique and the related analysis method to study the carrier recombination decay process in heterojunction materials in a non- destructive and contactless fashion. The corresponding "surface velocity" parameter describing the surface and/or interface quality as well as the interface electric field will be determined quantitatively. A quantitative description of the interface quality to determine the interface electric field and to establish the relationship between these material properties and device performance is central to the characterization requirements of compound semiconductor heterojunction materials.

Agency
National Science Foundation (NSF)
Institute
Division of Industrial Innovation and Partnerships (IIP)
Type
Standard Grant (Standard)
Application #
9160685
Program Officer
Ritchie B. Coryell
Project Start
Project End
Budget Start
1992-01-01
Budget End
1992-09-30
Support Year
Fiscal Year
1991
Total Cost
$49,902
Indirect Cost
Name
Kopin Corporation
Department
Type
DUNS #
City
Taunton
State
MA
Country
United States
Zip Code
02780