Silicon carbide whiskers which are single crystal SiC are known to exhibit near theoretical mechanical properties including virtually no creep and strength retention at high temperatures. The techniques of growing single crystal SiC whiskers will be adapted to the growth of continuous single crystal SiC fibers. Development of continuous filament SiC that has exceptional strength and creep resistance to very high temperatures will contribute to the development of advanced ceramic, intermetallic and metal matrix composite materials in a variety of engine, energy conversion and structural applications.
