9360519 Ryding Insitu wafer analysis is proposed in order to examine metallic contamination in SIMOX silicon-on-insulator substrates during the early implantation stage of their fabrication. Early detection of any metallics in the active silicon layer would greatly improve chances for impurity source tracking and ultimate cost reduction. In Phase I, we propose to design and fabricate an in-situ, non-destructive impurity detection capability at the ion implantation station of SIMOX fabrication. Several design advantages are incorporated which enhance detection sensitivity and ease of implementation. Phase II is proposed to transfer the in-situ apparatus onto the production implant machine, incorporating design modifications or required refinements. In-situ, non-destructive testing of manufactured material and ion beam control optimization based on the detection and feedback will ensue. Phase III is the commercialization of the probe station as a product for high energy higher current implantation stations, consistent with IBIS products. The nation may expect to benefit from the development of an in-situ, non-destructive wafer contamination detection system. Such early stage detection may be used as an advanced quality control tool which will enhance product development and material for the silicon industry. *** v s t $ $ ( F / A A / 1 Courier Symbol & Arial 5 Courier New A <<< " h * * = C R:WW20USERABSTRACT.DOT Denise Henry Denise Henry
