9319421 Matyi The overall goals of this program are (1) to develop advanced analytical techniques based on x-ray diffraction for the quantitative study of crystallographic defects in II-VI semiconductors; (2) to develop a better understanding of the effects of alloying on the crystal defect structure and the process of defect generation; and (3) to articulate the effect of structural defects on the optical properties of these materials. The intrinsic defect structure of the starting materials will be fully characterized using a broad array of advanced x-ray diffraction methods, with particular emphasis given to high resolution triple crystal diffraction and diffuse scattering measurements. We will also explore the usefulness of anomalous transmission and short wavelength x-ray diffraction measurements as alternative methods for defect characterization. In addition to analyzing as-grown samples of Cadmium Telluride and its ternary alloys, samples will be annealed under Group II and Group VI overpressures to alter the defect structure and optical behavior in a controlled fashion. %%% The primary goal of this program is to develop a fundamental- understanding of the growth, processing, and properties of wide bandgap II-VI semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. In addition to these fundamental research goals, the proposed research will lead to a better understanding the relationship between overall II-VI materials growth and processing methodologies and the physical properties of II VI semiconductors. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***
