Instrumentation will be acquired for the metallo-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) synthesis of III-V nitrides using funds from the Academic Research Infrastructure Program. The major items include a RF heated III-V MOCVD nitride system and a nitrogen plasma source for MBE growth. The aluminum, gallium and indium nitride materials are the most promising materials for optoelectronic devices to operate in the ultraviolet to blue wavelength regime. The research activities will focus on: 1) development of novel epitaxial growth technologies for III-V nitride semiconductors, 2) fundamental studies of the epitaxial growth mechanism, and 3) the fabrication of UV/blue laser diodes, high temperature electronics, and vacuum electronics devices. This research involves substantial support and interest from industrial collaborators. Studies of the epitaxial growth of III-V nitride semiconductors will be conducted with the ultimate objective of producing high quality laser diodes for use in the ultraviolet and blue wavelength regimes. The III-V nitride semiconductors are useful materials for high temperature electronics and also for vacumn electronics devices. The III-V nitrides are technologically important materials for devices, particularly at shorter wavelengths and at higher temperatures.
