9601598 Pelz An ultrahigh-vacuum, variable-temperature scanning tunneling microscope and an x-ray spectroscopy facility will be established at Ohio State University. The facility will be attached to a modular molecular beam epitaxy system and will thus allow for in situ characterization of the chemistry and electronic structure of heterostructure interfaces. Research activities supported by the facility include studies of the interface chemistry and atomic structure of GaAs grown on lattice-matched Ge/GeSi/Si substrates, charge trapping in metal/semiconductor structures, the growth of epitaxial metal/semiconductor structures with III-V materials, and metal contact formation on polymer films. The scanning tunneling microscope will be configured so that it can perform variable-temperature ballistic electron emission microscopy of buried interfaces, in addition to conventional structural studies of surfaces. This will permit detailed studies of metal/semiconductor interface formation over a wide range of metal coverage. %%% The incorporation of the requested instrumentation to the film growth facility results in a powerful tool for the characterization of interfaces between dissimilar materials. In addition to the direct research benefits, acquisition of the instrumentation will enhance the training of graduate students from several departments through interdisciplinary research using state-of-the-art facilities. ***
