9522201 Chou The research uses nanofabrication which employs ultra-high resolution e-beam lithography, RIE and the integration of other nanotechnologies to realize unique and novel device structures. The emphasis is on improving the e-beam lithography system and examining new RIE etches to define nanostructures with sub-10 nm dimensions. The research addresses three nanostructures: (1) Si quantum-Dot transistors operating at room temperature, (2) ultrafast Si MSM photodetectors and (3) high-speed optical receivers using MSM PD's and sub-100 nm Si MOSFETs. In order to realize these structures the e-beam diameter will be reduced from 4 nm to 2.5 nm by replacing their tungsten filament with a LB6 filament, the system noise will be reduced and the accelerating voltage will be increased from 40 KeV to 50 KeV. Inorganic resists will be examined for sub 10 nm feature sizes along with chlorine-based RIE processes. ***
