9700111 Neugroschel The Solid-State Electronics laboratory at the Department of Electrical and Computer Engineering of the University of Florida proposes to purchase semiconductor parameter analysis stations to support fundamental research in deep-submicron transistors for advancement of future technology of American integrated circuit manufacturers. The equipment will be used for several projects, such as the NSF grant (ECS-9220382) supported investigation on the properties of thin Ge(x)Si(1-x) layers for state-of-the-art GeSi heterojunction bipolar transistors (HBTS) for analog-digital telecommunication applications beyond the 2GHz bands. A follow-on proposal to NSF on this subject is being prepared to meet the NSF-GOALI initiative with industrial partners. Another current research project that will use the equipment is a Semiconductor Research Corporation contract on investigating the fundamental reliability limits of deep submicron silicon metal-oxidesemiconductor and bipolar junction transistors (MOSTs and BJTS). Other ongoing and planned investigations include deep submicron thin-film silicon-on-insulator (TFSOI) MOST and BJT technology for low power applications, fundamental limits on extending Si MOSTs to <0.1-micron and
