Spectral numerical modeling is to be carried out to simulate magnetohydrodynamic flows of electrically conducting liquid. The regime to be studied is for intermediate strengh magnetic fields, neither so strong as to suppress inertia effects nor so weak as to modify flows only slightly. The analysis will be applied to crystal growth configurations with transverse magnetic fields. The configurations to be modeled has the potential for achieving greater uniformity in crystals grown for various semiconductor applications. Results will have utility in defining optimum growth conditions.
