Abstract - Griffin & Maverick - 9311527 Copper metallization is a potential new material technology for manufacturing ultra large scale integration (ULSI) devices. Advantages of copper include low resistivity and high resistance to electro- and stress-migration. Chemical vapor deposition (CVD) offers several advantages relative to other deposition methods including the ability to achieve good film conformality over high-aspect ratio features (for example, trenches and multi-level metallizations). This project is aimed at studying the reactants, mechanisms, and reactor design criteria needed to establish low-temperature CVD of copper thin films as a new metallization technology of ULSI devices. The primary goal is to develop quantitative, mechanistic rate expressions and reactor transport models of various Cu CVD processes. These models will be applied to analyze experimental growth rates for specific CuI and CuII compounds measured using a vertical flow, single wafer reactor. Special attention will be given to product inhibition effects at high conversion, to which end kinetic results will be complemented with independent studies of ligand adsorption/desorption kinetics on high surface area copper powders. V l SITEVST 91S #y 2 ÕHEMADV 91S jW s ÕSSAY BK! AGV b ÕEFFERS1BK! V O ; JEFFERS1JAC V S ; ÕURFRM7 ÕEURNE BK! n ÕEURALNEBK! F , = COV 91 yC Abstract - Griffin & Maverick - 9311527 Copper metallization is a potential new material technology for man ufacturing ultra l ! ( * X ~ X ! ! D X X ( Times New Roman Symbol & Arial O O " h E e / Maria K. Burka Maria K. Burka
