9601835 Hatalis The rapid thermal annealing (RTA) system will enable the formation of ultrathin gate insulators for CMOS transistors, multi-dielectric nonvolatile semiconductor memory devices and promote the development of a new technology for novel silicon carbide MOS devices especially the so-called MCT or MOS Controlled Thyristors. New silicide contact metallurgy, and rapid crystallization of amorphous silicon films will be explored for both silicon ICs and TFT based flat panel displays. Furthermore the new RTA system will provide us with critical control of the device dimensions during the implant activation anneals which is essential for the realization of our new nanoelectronic devices. The ICP high density plasma reactor will be used in the development of new materials and new deposition processes for both IC and flat panel display applications. Such materials and processes will include: low dielectric constant fluorocarbon films as intermetal dielectric material, high quality amorphous silicon and silicon dioxide films deposited at high rates for IC and flat panel display applications, and novel plasma hydrogenation, oxidation and nitridation processes for single crystal silicon, polysilicon and compound semiconductor devices. A rapid thermal processing system and an inductively-coupled high density plasma (ICP) deposition system will be purchased in order to enable advanced research and training at Lehigh University on the following microelectronics areas: a)silicon integrated circuits ,b) compound semiconductor microwave devices, and c) thin film transistor flat panel displays. The equipment will enhance the education of students by exposing them to the fundamental s and applications of new singly wafer processing approaches.
