This project is in the area of the Materials Chemistry Initiative. The investigators will examine the chemical vapor deposition of thin films of metal nitrides of Al, Ga, In, Mo, and Nb using new organometallic precursors. Unlike previous routes, which employed Nitrogen or Ammonia as the source of the nitrogen, the precursors will make use of reactive nitrogen moieties such as azide. For instance, preliminary results have shown that diethylaluminum azide deposits an aluminum nitride thin film at 400 degrees C. It is intended that such species will lead to the nitride films at lower temperatures with greater selectivity, and their plans include the use of laser-and plasma-induced depositions along with the thermally activated processes. The relationship between the structure of the precursor and the structure and properties of the film will be explored in detail. A specially designed reactor will be used to detect reactive intermediates in the gas phase by mass spectrometry. These studies along with the evaluation of the overall rate of deposition will lead to a better understanding of the relationship between the mechanism of reaction and the properties of the thin film.
