To develop a computer program which can simulate the growth of GaAs and related compounds on patterned substrates by Organometallic Chemical Vapor Deposition (OMCVD). The growth simulation is based on the Wulff construction technique which has been shown to accurately predict the shapes of epitaxial layers grown on patterned substrates. In order to perform the Wulff constructions a detailed knowledge of the oreintation dependence of the growth rate is needed. Therefore, a comprehensive investigation of the OMCVD growth rate as a function of crystallographic orientation, growth temperature, and alloy composition will be conducted. Such a simulation program will be very useful for designing discrete and/or integrated microwave millimeter-wave, and optoelectronic devices and circuits.
