This project will study the feasibility of fabricating microelectronic devices from boron and boron carbide-based materials. The research is based on initial success in the selective area deposition of boron and boron carbide by chemical vapor deposition, using boranes. A number of electronic devices and electronic grade protective coatings will be fabricated by using x-ray lithographic techniques. Boron carbide-based semiconductor devices may be of considerable interest, due to their potential high temperature and radiation-resistant properties. As a result, such devices may work under extreme conditions.

Project Start
Project End
Budget Start
1992-11-01
Budget End
1994-10-31
Support Year
Fiscal Year
1992
Total Cost
$25,846
Indirect Cost
Name
Syracuse University
Department
Type
DUNS #
City
Syracuse
State
NY
Country
United States
Zip Code
13244