Professor Blakemore plans to continue his studies of deep level flaws in semiconducting crystalline compounds. These investigations will include both modelling of the properties of the flaws arising from impurities, defects and complexes and electrical and optical characterization experiments. He is an internationally recognized authority on deep-level flaws in crystalline semiconductors. This work is very important for the fundamental understanding of the properties of these materials and for the characterization of materials for device applications.
