The objective of the research is to investigate the chemical and physical properties of radiation-sensitive materials composed of a functionalized polymer and an inorganic initiator. The polymeric component in these materials contains a base-sensitive or reduction-oxidation site, while the initiator is a transition metal complex or semiconductor particle that generates base or reduction-oxidation equivalents upon excitation by the radiation. The materials will be characterized using absorption and emission spectroscopies, flash pyrolysis, electron spin resonance spectroscopy, thermogravimetric analysis, and molecular weight measurements. The most promising materials will be evaluated as photoresist and/or electron-beam resists for micropatterning for integrated circuits. The research will be conducted as a collaboration between the University of Georgia and IBM Almanden Research Laboratory. The materials will be evaluated for their potential applications in the electronics industry.

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
8715635
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1988-12-01
Budget End
1992-11-30
Support Year
Fiscal Year
1987
Total Cost
$320,526
Indirect Cost
Name
University of Georgia
Department
Type
DUNS #
City
Athens
State
GA
Country
United States
Zip Code
30602