The goal of the investigation is to study the interdiffusion and interface reactions in semiconductor materials, particularly metal-semiconductor interfaces. The emphasis in ongoing new insight into the atomic behavior associated with such reactions to include crystallization, grain growth, and dislocation behavior. The primary analytical technique is dynamic, in-situ high resolution electron microscopy, and x-ray diffraction, Auger electron spectroscopy, Rutherford backscattering will provide complementary information. The research concentrates upon both the thorough understanding of the reactions of metals with semiconductors as well as the reactions within the semiconductors as the reaction progresses from the very beginning of the formation of the interface.

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
8902232
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1990-01-15
Budget End
1993-06-30
Support Year
Fiscal Year
1989
Total Cost
$433,800
Indirect Cost
Name
Stanford University
Department
Type
DUNS #
City
Palo Alto
State
CA
Country
United States
Zip Code
94304