This project addresses issues in heteroepitaxy through research into MBE growth and detailed characterization of epitaxial fluoride buffer films on silicon substrates, and subsequent overgrowth with III-V materials (GaAs, InGaAs). The aim is to understand how to tailor and control defects in the overlayers by using such buffer films. A general goal of the project is to study heteroepitaxy from the point of view of engineering ideal substrates for semiconductor materials used in photonic and electronic applications.
