This research is concerned with the atomic and electronic properties of tetrahedrally coordinated compound semiconductor surfaces and their interfaces with metals. The technologically important (100) surfaces grown by molecular beam epitaxy will be studied in addition to II-VI wurtzite surfaces. The work will focus on an in depth investigation of photoemission induced surface photovoltage and its implications on the validity of the present Schottky barrier models in addition to the structural characteristics of (100) interfaces. The study of gallium antimonide surfaces and their interfaces with a wide range of metals. Following the successful determination of the atomic structure of (1120) and (1010) wurtzite cadmium selenide and sulfide studies will be initiated of their interfaces with totally reactive species such as antimony and bismuth. The objective is to identify atomically ordered and abrupt model interfaces which can be employed in experimental and theoretical studies of the role of the overlayer electronic structure, interface bonding, dangling bonds and local defects in the formation of Schottky barriers on these compounds.
