This project addresses fundamental processes and atomic level details of oxygen induced defects in compound semiconductors such as aluminum gallium arsenide (AlGaAs). Epitaxial crystal growth by MOCVD with unique introduction and control of oxygen content by aluminum alkoxides, characterization of the epitaxial layers by optical, electrical, and ion channelling chemical reactions, and assessment of the thermal stability of GaAs:AlO epilayers are included in the research. The information gained from these studies is expected to provide new scientific understanding and is relevant to semiconductor materials of significant technological importance; AlGaAs and GaAs epitaxial layers are used in heterojunction devices such as solid state lasers and transistors.
