Fundamental research on critical interfaces in thin layered structures formed from oxide films deposited in-situ on various III-V compound semiconductor surfaces with silicon interlayers will be conducted. The idea being explored is that the III-V/Silicon interface states do not pin the Fermi level, and the Si/SiO2 interface either exhibits a very low density of interface states, or a favorable energy distribution of such states in the gap, thereby making MOS structures with III-V semiconductors feasible. The objective is to understand basic factors affecting interface state density with these materials and to achieve conditions of sufficiently low(<1011cm-2) values to allow effective surface potential modulation in III-V metal-oxide-semiconductor(MOS) structures. %%% This research is expected to provide deeper understanding of--and may also provide a long-sought solution to--the control and manipulation of electronic energy states of compound semiconductors at interface regions of layered structures. The results could be of particular significance to the technology of large scale, high speed integrated electronic and photonic circuits which consume low power.
