Fundamental research directed toward improved understanding of growth and processing of semiconductors, and the electronic properties of heterostructures through the development and use of advanced contactless electromodulation methods of photore- flectance and electroreflectance will be conducted. A major advantage of these methods is that they can be used in situ and in real time for effective improvement in the control of advanced semiconductor growth and subsequent processing as well as providing fundamental information on the basic electronic properties of these materials. The research base established will serve to improve materials parameters such as alloy composition, Schottky barrier heights, interfacial quality, well width in quantum well structures and superlattices. %%% This research is expected to provide deeper fundamental understanding of semiconductor growth and processing, and the fundamental electronic properties of heterostructures. From an application point of view, understanding these processes and properties is beneficial to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9120363
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1992-07-15
Budget End
1995-12-31
Support Year
Fiscal Year
1991
Total Cost
$210,000
Indirect Cost
Name
CUNY Brooklyn College
Department
Type
DUNS #
City
Brooklyn
State
NY
Country
United States
Zip Code
11210