Fundamental research directed toward improved understanding and interrelationships of the atomic structural, electronic and vibrational properties of metal-semiconductor interfaces will be conducted The PI is recognized as a pioneer in the imple- mentation of MEIS for surface analysis, and the proposed program brings together an impressive array of advanced surface analysis techniques to assist in the fundamental studies proposed. The research aims to understand the correlation between Schottky barrier behavior and general metal-semiconductor interface atomic level structure and electronic properties. %%% This research is expected to provide deeper fundamental understanding of metal-semiconductor interfaces and their relationship to Schottky barrier behavior in terms of barrier height and homogeneity. From an application point of view, understanding these properties is helpful to semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.
