Complementary, novel growth and processing techniques for photonic and electronic materials are being investigated. Metalorganic chemical vapor deposition (MOCVD)-based growth on non-planar substrates can give rise to innovative, three-dimensional device concepts. Selective layer epitaxy onto pre-patterned substrates can be used to extend the amount of strain and lattice mismatch possible for defect-free heterostructures. High quality regrowth necessitates clean, defect free surfaces, which imposes constraints in the concomitant etch processes used. This research utilizes largely ion-free, dry chemical cleaning and etch processes. In both materials growth and etching, laser-induced processing to extend the process control possible is being explored. Laser-assisted atomic layer epitaxy will be used to obtain self- limiting, monolayer control of grown layers. Laser-induced photoelectrochemical dry etching will be studied in order to achieve highly controlled, bandgap selective dry etching of heterostructures. %%% Modern electronic and optical semiconductor devices impose increasingly stringent demands on the materials and processes used to form them. The research proposed here, utilizes laser controlled materials deposition, low-damage laser-induced etching and extensive process monitoring, allowing greater inherent process control. Moreover, the innovative approach of growth on previously sculpted structures allows a truly three dimensional approach to device and circuit formation allowing higher ultimate device density in integrated circuits.
