This proposal plans to investigate the interfaces between the high Tc superconductor oxide film and other material media. The high Tc superconductor oxide film, deposited on a yttria-stabilized zirconia (YSZ) buffered silicon substrate. This 2-terminal device structure is characterized electrically by the I-V and C-V measurements. The high Tc superconductor oxide is of the ytrrium- barium-cupric oxide (YBCO) type. Deposition is made by the pulsed deposition (PLD) method. Processing parameters will be varied and the resultant 2-terminal device structures will be probed of their interface bahaviors. %%% This research will provide information to the understandings of the interfaces between the high Tc superconductor oxide film layer and other material media in a 2-terminal device structure. Electrical characterization of the 2-terminal device structure, through the I-V and C-V measurements, will provide information which can suggest future improvements in the performance of the device structure. It will enhance the potential usefulness of superconducting devices.
