This project is an experimental study of scientifically and technologically important point defects in elemental and compound semiconductors using optical detection of magnetic resonance and optical detection of electron-nuclear double resonance. Some of the defects are produced by electron irradiation of Zinc-Tellurium samples at low temperatures. Another part of the work deals with metastable defects, such as DX and EL2 centers, in II-VI and III-V semiconductors. Other materials being studied are fullerenes, MBE nitrogen-doped Zinc-Selenium and porous silicon.
