Localized optical-phonon modes are expected to occur in gallium (aluminum) arsenide quantum-well structures and would be important due their strong interaction with current-carrying electrons. They propose to examine their unique dynamical properties. Long-term objectives are to study the effects of interface roughness and dynamic electron screening as well as to explore the possible generation of non-equilibrium phonon distributions. % % % This research will have a direct impact on the design of new electronic devices of a type that are already revolutionizing microelectronics technology in the areas of semiconductor lasers and optical communications.
