The II-VI semiconductors feature bandgaps ranging from the ultraviolet to the far infrared, creating the potential to form the basis of a wide variety of electronic and optoelectronic devices. II-VI semiconductors are not as developed as their III-V counterparts, primarily because of difficulties encountered in understanding and controlling defects arising during growth. This proposal is for acquisition of equipment to address the common problem of defects in wide bandgap II-VI semiconductors. To address this problem, we propose to (1) build a custom Molecular Beam Enitaxy system with in-situ instrumentation to investigate growth kinetics; (2) assemble a high resolution optical spectroscopy system for low temperature photoluminescence and Raman spectroscopy using a double monochromator and tunable laser system; and (3) assemble an optically detected magnetic resonance system which allows magnetic resonance identification of point defects in semiconductors. The magnetic resonance experiments will involve use of the double monochromator and tunable laser system, in addition to a 4 Tesla magnet dewar with optical access and associated microwave bridge. Acquisition of the proposed equipment allows original research to improve the understanding of the optical, electrical, magnetic, and defect properties of these difficult materials. In particular, special emphasis will be placed on understanding the relationship between growth mechanisms and defect formation in these materials, thus leading to both improvement and better control of basic properties. This equipment will immediately contribute to the research programs of the three principal investigators. The planned research efforts will involve two postdoctoral scientists and six or more graduate students. It has always been the practice of investigators to include undergraduates, thus it is anticipated that this equipment will also influence the career of two to three undergraduates each year.
