A one year program of determing the electronic properties of macroscopic and mesoscopic systems composed of the group IV elements will be carried out. Having determined the properties of Si in such configurations, and having done some preliminary work of Ge MOSFETs as well, concentration will first be on investigations of the Ge:Si alloys in the Ge rich end of the phase diagram and then proceed to further studies of the Ge surface. If time allows the SiC system will be studied, which is unique in having many different stacking orders and band-gaps. A physical construct that will aid the testing of surface conduction with no lithography needed on the surface of the sample is being developed; it will all be on the probe. The properties in a MOSFET, quantum well or pristine surface configuration will be tested. %%% Advanced materials (that is those materials which have not been studied before or previously known materials that are studied in new configurations and hence their behavior is governed by this configuration), their properties the phenomena that occur in them will be studied. One often learns to understand these two important aspects by comparing two similar events or materials and determining what causes the difference. This study compares and contrasts many similar materials that have been the foundation of modern electronics or will be in the future. Alloys and elemental forms of carbon (diamond), silicon, and germanium will be looked at with standard tools and a new one invented that allow a quick determination of the surface conductance properties.
