Fundamental studies of the dependence of the InAlAs/InP band offset on strain will be conducted by measuring photoluminescence from the Type II staggered InAlAs/InP interface as a function of pressure using a diamond anvil cell. The interplay between the deleterious effects of interface roughness introduced by atomic exchange of arsenic and phosphorus, and the benefits produced by strain will be explored; it is anticipated that the ability to tune the strain through the use of hydrostatic pressure will provide fundamental information on the nature of this unique material. %%% Research will be conducted on the factors that influence the electronic and optical properties of a particular compound semiconductor material combination with potential advantages in electronics and photonics applications. This research is expected to give a fundamental understanding of the effect of strain on basic material properties and performance. The semiconductor material combination under study has wide applicability in electronic and optoelectronic devices; understanding the effects of strain on electronic and optical properties is also expected to improve the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications.
