9307662 Mayer Fundamental materials science investigations of ion- and thermal-induced transformations/reactions in III-V semiconductors and copper-silicon systems will be conducted. It is proposed to investigate the reactions of alloying elements in Cu and oxide formation in Cu3Si/Si. The study of alloying elements in Cu will be an important factor in the use of Cu for integrated circuit metallization for adhesion and formation of diffusion barriers. The controlled formation of oxide layers at low process temperatures may offer a method to form this oxide on silicon. Since electrical activation of Si-implanted GaAs is a sensitive function of implantation dose-rate and substrate temperature it is planned to investigate ion induced defect interaction by the combined use of electron microscopy, electrical analysis and ion channeling. %%% An understanding of dopant activation in ion-implanted GaAs is important to integrated circuit applications. Research will be conducted on fundamental ion-solid interactions as well as factors that influence the electronic and optical properties of semiconductor material combinations with potential advantages in electronics and photonics applications. The semiconductor material combinations under study have wide applicability in electronic and optoelectronic devices; thus the research results are expected to provide the basis for continued improvements in the performance of advanced devices and integrated circuits of the type used in computing, information processing, and telecommunications. ***
