Optically detected resonance (ODMR) will be applied to a study of point defects in two ternary chalcopyrites (silver gallium selenide and zinc germanium phosphide). These semiconductors have been identified as primary candidates for frequency-conversion applications in the near and mid-infrared wavelength regions. The proposed studies will help to identify and characterize the point defects responsible for unwanted optical absorption bands in the range from 0.7 to 2.0 microns in these materials. Nonlinear optical materials are used in tunable infrared laser systems. Two prime candidates, silver gallium selenide and zinc germanium phosphide, have met limited success due to defects which produce optical absorption bands. Optical spectroscopic techniques which allow atomic scale resolution will be applied to characterize the defects.
