9413322 Hwang This project seeks to achieve an understanding of the relationship between kinetic roughening and native defect formation in wide-gap II-VI semiconductors. Kinetic roughening results from the stochastic nature of the growth process and may lead to loss of control over surface stoichiometry. Research towards the construction of a kinetic phase diagram that correlates the degree of roughening and growth parameters will be conducted. Such a diagram allows various growth conditions to be systematically explored so that optimal growth parameters can be identified. The application of statistical physics and surface physics to the study of defect formation is expected to provide new insight into the issue of dopant compensation as well as the kinetic processes on growing surfaces. %%% This project addresses the issue of dopant compensation in wide-gap II-VI semiconductors from a surface physics point of view. The goal of the research is to establish a relationship between kinetic roughening and dopant incorporation for a class of materials that are being employed to develop blue semiconductor lasers. Currently, doping control remains to be the main challenge, and it is expected that the results of this research will have an impact on the fabrication of these devices, and will contribute to improving the general perform ance of advanced devices and integrated circuits used in computing, information processing, and tele communica tions.
