A Cameca IMS-6F Secondary Ion Mass Spectrometer (SIMS) and associated peripheral equipment will be acquired with funds from the Academic Research Program. This new SIMS will replace a Cameca IMS-3F SIMS which has been used for more than a decade, but is no longer a state-or-the-art facility that meets all the needs of the adjacent user committee. The new SIMS model will give greatly enhanced sensitivity, will provide much better spatial/depth resolution for depth profiling, and will provide improved sample charging compensation. The new equipment will make possible for the first time the analysis and detection of carbon and oxygen negative ions. The facility will be used in research projects involving: 1) thin film deposition and processing, 2) surface preparation technology for microelectronic processing, 3) fabrication and measurement of shallow junctions, 4) SIMS analytical technique and instrumentation development involving automated sample charge neutralization control, high spatial resolution SIMS imaging and digital control of depth profiling parameters. A secondary ion mass spectrometer (SIMS) with state-of-the-art sensitivity, sample charging compensation, and spatial/depth resolution for depth profiling will be acquired to replace an older spectrometer that is no longer has state-of-the-art capabilities. The new spectrometer will be used for thin film deposition and processing, surface preparation technology for microelectronic processing, fabrication of shallow junction devices and the development of new SIMS system capabilities.
