9416871 McCann Fundamental processing research related to the chemistry and physics aspects of fabrication of novel IV-VI semiconductor laser structures composed of Pb(1-x)EuxSe(l-y)Tey and Pb(1-x)SnxSe(l-y)Tey layers lattice matched with BaF2 diode lasers will be carried out. Procedures will be studied which involve removing an epitaxially-grown narrow bandgap IV-VI semiconductor laser structure from the substrate and then sandwiching the laser structure between two thermally conductive heat sinks. IV-VI semiconductor laser structures will be grown using both molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE). %%% The primary goal of this program is to develop a fundamental understanding of advanced processing of IV-VI semiconductor laser materials. An important feature of the program is the training of students in a fundamentally and technologically significant area of materials research. This research will contribute to improving the general performance of advanced photonic devices used in monitoring atmospheric constituents. ***
