9457926 DenBaars This research program is directed toward understanding and developing novel metallo-organic chemical vapor deposition schemes for the synthesis of III V nitride serniconductor films. The growth techniques of atomic layer epitaxy and flow modulated epitaxy by metallo-organic chemical vapor deposition (MOCVD) will be used to fabricate (aluminum, gallium, indium) nitride heterostructure materials and devices. These novel approaches of MOCVD growth are proposed in order to lower the growth temperature and increase the quality of the films. Growth on a variety of substrates such as: sapphire, silicon carbide, zinc and magnesium oxides, and the use of alternative precursors, such as tertiary-butylamine, will be investigated to improve the optical and electrical properties of the nitride films. %%% This research project involves the fabrication of newly emerging nitride semiconductor materials and devices. This material system has enormous commercial relevance since it is one of the most promising materials for optoelectronic devices operating in the ultraviolet to blue wavelengths. A laser diode fabricated with these materials will vastly improve the optical storage density for CD ROMs and could conceivably enable full color projection displays. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general perform ance and to the realization of advanced devices and integrated circuits used in computing, information processing, and tele communica tions. ***
