9502117 Goorsky This research program aims to develop a deeper understanding of the connection between microscopic materials structure and performance in compound semiconductors. The relationship among substrate properties, initial defect nucleation, and device performance in GaAs- and InP-based heterostructures will be studied. The role of substrate perfection and substrate miscut on the initial stages of misfit dislocation formation and related defects in strained epitaxial structures will be explored as well as the behavior of layers grown under either tensile or compressive strain. This will help develop a fundamental understanding of precisely how the magnitude and sign of stress in the layers influences the formation of defects. %%% This research will contribute to improving the general performance and to the realization of advanced devices and integrated circuits used in computing, information processing, and telecommunications. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. ***

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9502117
Program Officer
LaVerne D. Hess
Project Start
Project End
Budget Start
1995-07-01
Budget End
2000-06-30
Support Year
Fiscal Year
1995
Total Cost
$331,080
Indirect Cost
Name
University of California Los Angeles
Department
Type
DUNS #
City
Los Angeles
State
CA
Country
United States
Zip Code
90095