9525758 Nathan This research project follows a two-fold approach to achieve greater understanding and optimization of the transport properties of metal-semiconductor junctions: a)extend exploration of Schottky barrier height tuning with thin interlayers between the metal and semiconductor to consider different interlayers, semiconductors, and metals; b)examine the microscopic composition and structure of the interlayer, and the redistribution of interlayer atoms during junction fabrication and processing. The long-term practical outcome of this program may be the development of a new simple and reproducible method of tuning Schottky barriers, and the incorporation of engineered Schottky barriers in classes of prototype devices such as Schottky barrier photon detectors, metal/semiconductor/metal detectors, and MESFETs. %%% The knowledge and understanding gained from this research project is expected to contribute generally to improving the performance of advanced devices used in computing, information processing, and telecommunications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
