9531696 Hull This research project aims, through combined experimental and theoretical work, for development of a process simulator for energetic, kinetic and electronic descriptions of misfit dislocations in strained layer semiconductor epitaxy. The primary goals of the program are to: provide a coherent framework and a repository for experimental data relati ng to misfit dislocations in strained layer epitaxy; incorporate mechanistic understanding of the different processes involved in plastic relaxation in strained layer epitaxy, and to combine this with experimental descriptions of these processes to enable predictive simulation of the extent of plastic relaxation as a function of thermal history du ring growth, annealing and materials processing; and to define quantitative relationships between the structure/density of misfit dislocation arrays and their electronic properties, and incorporate these relationships into the process simulator to allow modeling of device ramifications of plastic relaxation. The approach to these goals includes: a ddressing shortcomings in experimental descriptions of kinetic processes in plastic relaxation, especially the dislocation nucleation process; to quantitatively determine the effects of critical materials processing steps--implantation and activation/metallization/oxidation) upon plastic relaxation; to correlate misfit dislocation structure and densities with their effect on electronic properties of the host structure, and, to investigate the effects of device operation on the dislocation microstructure, and appropriate software development. The intent is to develop this concept such that at the conclusion of the program, the simulator will be available for general distribution within the scientific community. %%% The research will contribute basic materials science knowledge at the fundamental atomic level of technological relevance to several aspects of advanced microelectronic devices and integrated circuitry. Additional ly, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the perfor mance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and techno logically significant area. *** _
