9624603 Tuominen This experimental research project is designed to help advance the science and technology of nanostructure single-electron devices. The first research objective of this project is to utilize single-electron device techniques to explore and understand several key issues in mesoscopic superconductivity: even-odd electron number physics, the physics of macroscopic quantum variables, and coherent charge transport through superconducting-normal metal interfaces. The second objective is to investigate -- and precisely control -- the quantum interaction `etween single-electron devices and their electromagnetic environment by utilizing the powerful techniques of cavity quantum electrodynamics. The 60 nanometer-scale devices used in this work will be fabricated using electron-beam lithography, thin-film metallization, and microelectronics clean room techniques. An ultrahigh vacuum thin-film deposition system will be constructed to provide a major advancement in the nanostructure device fabrication technology. Measurements will be performed at cryogenic temperatures (10 mK to 10 K) using lownoise electronic transport measurement instrumentation. The overall goal of these research activities is to establish a strong scientific foundation for single-electron device physics, and help it progress toward what may become the ultimate level in electronics technology. %%% The objective of this experimental research project is to advance the science and technology of single-electron devices. These recently developed devices are nanometer scale structures in which electrical charge can be controlled electron-by-electron. In the first part of this project, single-electron techniques will be used to explore superconductivity in ultrasmall devices. In another part, the interaction between single-electron devices and their electromagnetic environment will be investigated and c ontrolled by utilizing a powerful, new technique called cavity quantum electrodynamics. The nanostructure devices used in this work will be fabricated using electron-beam lithography, thinfilm metallization, and microelectronics clean room techniques. Collectively, these research activities will help single-electron device physics progress toward what may become the ultimate level in electronics technology. ***

Agency
National Science Foundation (NSF)
Institute
Division of Materials Research (DMR)
Application #
9624603
Program Officer
H. Hollis Wickman
Project Start
Project End
Budget Start
1996-06-15
Budget End
2000-02-29
Support Year
Fiscal Year
1996
Total Cost
$150,000
Indirect Cost
Name
University of Massachusetts Amherst
Department
Type
DUNS #
City
Amherst
State
MA
Country
United States
Zip Code
01003