The goal of this project is to complete the development of a two course sequence (Semiconductor Device Physics and Introduction to Microelectronics) which provide the foundation for semiconductor devices by adding a laboratory course which emphasizes test and characterization. Upon completion of the present courses, the student has an understanding of the basic physics of pn junctions, bipolar transistors, and both junction and metal oxide semiconductor field effect transistors. This new laboratory will provide the student with the tools required to characterize and evaluate the performance of these devices. This will, in turn, provide the student with the basic test skills required to work effectively in industrial organizations developing and manufacturing semiconductor devices and circuits. The current laboratory lacks the capacitance voltage apparatus which is essential for the characterization of MOS based devices, which dominate present integrated circuit technologies. With the equipment being acquired through this project, the development of the semiconductor device physics course sequence will be able to be completed.

Agency
National Science Foundation (NSF)
Institute
Division of Undergraduate Education (DUE)
Type
Standard Grant (Standard)
Application #
9250453
Program Officer
Daniel B. Hodge
Project Start
Project End
Budget Start
1992-07-15
Budget End
1995-12-31
Support Year
Fiscal Year
1992
Total Cost
$53,474
Indirect Cost
Name
Rochester Institute of Tech
Department
Type
DUNS #
City
Rochester
State
NY
Country
United States
Zip Code
14623