In IC fabrication chemical mechanical planarization (CMP) is used to planarize surfaces of conductors like aluminum, tungsten, tantalum and copper and dielectrics like silicon dioxide, silicon nitride, and low-k polymers. The CMP process is the only technique available now to provide surfaces across the die and wafer with planarity sufficient to meet the stringent depth of focus requirements of shorter wavelength lithographic techniques. The CMP of low-k polymeric materials and architectures overlaid on these polymers is challenging. This is because the low-k polymeric materials are mechanically softer and even porous, can flow under heat, and have hydrophobic surfaces. There exists a critical need for developing low pressure, selective, and effective CMP process of the new, low-k polymers and architectures overlaid on these polymers. The primary objective of this program is to develop a novel approach using magnetically responsive slurries (MRS) to conduct CMP of low-k polymers and associated structures. The project is a joint collaborative, interdisciplinary, synergistic effort between investigators from Clarkson University and University of Pittsburgh, with collaboration with industry. A fundamental and systematic investigation of the feasibility such a magnetically assisted CMP process will be conducted. The outcome of this program has the potential for a significantly high economic payoff. This project will have significant combined impact on the: basic science that forms the underpinning of the CMP technology, research infrastructure, and development of human resources.
