We propose to study charge transport and storage in ultra-thin, oxide-nitride-oxide (ONO) heteroinsulator nanostructures, which find application in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSMs). In particular, we will examine a new type of SONOS device called a NROMTM structure, which is programmed with hot electron injection and is able to store 2 bits of information spatially isolated over source and drain regions of the device. In addition, each of these bits has the possibility of multi-level storage opening the possibility for ultra-high density NVSMs. The study of device physics, the technology and potential applications of ultra-thin oxides are also relevant to the thrust into low-power CMOS circuits so our study will encompass experimental nanoscaled SONOS devices fabricated with fully-depleted silicon on insulator (FDSOI) CMOS technology. Characterization of traps at the semiconductor-insulator- gate interfaces and in the bulk insulator is an essential factor in predicting the performance and reliability of nanoscaled semiconductor devices, such as SONOS NVSMs. Our research program will investigate the fundamental limitations in nanoscaled SONOS NVSMs. The intellectual merit of this proposal resides in a vision where future advancements in nonvolatile semiconductor memory storage will play a central role in nanoscaled science and engineering. Our program integrates research and education to explore high-density NVSMs with unique heteroinsulator structures. The experimental and theoretical study of novel devices will entail the use of physics, chemistry, materials science and device electronics at the nanoscale with considerable opportunity to explore new frontiers through the generation of new knowledge. The broader aspects in our program will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, and promotion of partnerships. We have excellent educational and outreach programs to increase diversity with opportunities in nanoelectronics, especially semiconductor devices . an important area to maintain US leadership in a global economy. This research program provides an excellent vehicle for student research and education, minority student outreach and partnerships with industry.

Agency
National Science Foundation (NSF)
Institute
Division of Electrical, Communications and Cyber Systems (ECCS)
Application #
0429032
Program Officer
Rajinder P. Khosla
Project Start
Project End
Budget Start
2004-09-01
Budget End
2007-08-31
Support Year
Fiscal Year
2004
Total Cost
$252,000
Indirect Cost
Name
Lehigh University
Department
Type
DUNS #
City
Bethlehem
State
PA
Country
United States
Zip Code
18015