We propose a EAGER program to apply a new approach to study low-field carrier mobility in high-K, nanoscaled, semiconductor MOSFET devices ? devices with Coulomb scattering centers in the high-K dielectrics. This concept will permit the evaluation of lowfield carrier transport in nanoscaled devices with a two-terminal structure rather than the fabrication of a three-terminal device structure. We will use two hetero-insulator device structures: (1) a nonvolatile, ?charge-trap?, nanoscaled MANOS semiconductor memory device with programmable charge storage and (2) a metal gate, high-K, nanoscaled MOS transistor with fixed charge in the high-K dielectric. The intellectual merit involves the integration of research and education to explore lowfield, carrier transport in high-K nanoscaled devices with a simple two-terminal conductance and capacitance measurement, thereby, alleviating the need to fabricate three-terminal devices complete with ohmic contacts. We will characterize the influence of Coulomb charge in experimental high high-K devices on carrier transport by varying the sign, magnitude and position of the charge. Two terminal measurements will be compared with three-terminal measurements on completed device structures. The experimental and theoretical studies involve device physics, chemistry, materials science and modeling at the nanoscale. The broader aspects in our program will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, and promotion of partnerships with the industrial sector of the economy. We have developed excellent educational and outreach programs to increase diversity with opportunities in nanoelectronics, especially semiconductor devices ? an important area to maintain US leadership in a global economy. Our research provides an excellent vehicle for minority student outreach and partnerships with industry. The transformative nature of our research lies in a new approach to model low field transport with simple two-terminal structures, which can be easily fabricated in the laboratory without extensive photolithographic equipment. The concept is applicable to the study of carrier transport in a broad range of emerging nanoscaled devices and will aid rapid and innovative advances in the technology
