Principle investigator: Stuart A. Wolf, University of Virginia Project Summary: This project is focused on the development of novel tunnel barriers and electrodes for magnetic tunnel junctions that will be utilized in a new type of magnetic memory called Spin Torque Transfer Random Access Memory or STT-RAM. Although there is a worldwide rush to develop this new memory technology, there are some fundamental challenges that need to be overcome. In particular, finding materials that allow the junction to be switched with low currents and also have very long term thermal stability. The goal of this EAGER proposal is to very quickly demonstrate novel solutions to these challenges and provide a rapid path to accelerate the development of this technology just as the novel toggle switching did for the more conventional Magnetic Random Access Memory or MRAM that has been recently commercialized. A very unique approach is designed to solve this problem based on developing novel oxides that have exemplary properties that will enable tunnel junctions utilizing these materials to satisfy the requirements of very low power switching and excellent thermal stability (10 year retention of data). In this project the exploration has three paths that could produce a robust and scalable STT-RAM: (1) new tunnel barriers; (2) better ferromagnetic electrodes; (3) new material with perpendicular magnetization. Intellectual Merit: This proposal addresses the development of novel oxide and other materials and structures that are highly complex and show strong electronic correlations and emergent behavior. Understanding these materials and their emergent behavior has a clear intellectual payoff beyond just revolutionizing the STT-RAM state of the art. Furthermore, these materials are being prepared using new deposition methods: Biased Target Reactive Ion Beam Deposition and Pulsed Electron Beam Deposition that provide unprecedented control of the growth of highly ordered and smooth ultra thin films. The demonstration of the development of these films using these unique tools that enable rapid exploration of broad composition space and evaluation of novel properties provides solutions to a set of important research and technological challenges. This project has a high degree of Intellectual Merit and will provide a series of interesting publications in addition to translational technological solutions. Broader Impacts: If successful, the results of this project will be immediately incorporated into this new generation of random access, non-volatile memory which can, in principle be a Universal memory that replaces SRAM, DRAM and FLASH. UVa?s participation with the Semiconductor Industry both the large companies as well as a major startup company almost guarantees that any breakthroughs will be quickly adopted. The solid state memory industry has a market of over $100 Billion.
