This project will explore whether we can develop a electro-optic silicon nitride that is compatible with complementary metal oxide semiconductor (CMOS) fabrication. The ideal material for integrated photonics is compatible with CMOS electronics, has a high refractive index, is deposited, electrooptically active, and low loss; however, current photonic platforms fall short of meeting these characteristics. While silicon has revolutionized photonics over the last two decades because of its high refractive index and relative compatibility with CMOS electronics, the silicon photonic platform, which uses the plasma dispersion effect for refractive index modulation, is fundamentally limited by carrier loss. This fundamental loss limits the impact of silicon photonics in quantum information science, ultra-low power communications, and chip-based LIDAR. Silicon nitride is a CMOS compatible material with high refractive index and low loss; however, it is passive. Electro-optic silicon nitride (EO-SiN) has the potential to completely change the field of integrated photonics. If successful, one can envision an EOSiN platform for modulation, low loss guiding, switching, and nonlinear functionalities all integrated on a single chip. The proposed project will create a unique experience for one high school student from the Kearns Center Upward Bound Program. The experience consists of a six-week internship during the summer. The student will be immersed in the research group working on a project alongside other undergraduate, master's and PhD students. The goal of this effort is to expose one first-generation, low-income high school student to STEM fields to motivate them to follow a career in math, science, and engineering. The students will receive an integrated mentorship from McNair fellows (undergraduate students), master's students, PhD students, and the PI as they reinforce and discover the excitement of working in cutting edge research.
The PI proposes to explore whether we can engineer an electro-optic effect in silicon nitride using electrical poling. As a proof-of-concept of the potential of electro-optic silicon nitride, we will demonstrate a silicon nitride, on-chip, high-speed modulator. Understanding how to engineer an electrooptic effect in silicon nitride will bring forward a high refractive index, low loss, deposited material with CMOS compatibility and the ability to modulate the refractive index without inducing loss. It will clarify the origin of previously observed second harmonic generation in silicon nitride, which is hypothesized to come from either surface effects or the bulk properties of silicon nitride.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
